Multi-resistance states through electrically-driven phase transitions in VO2/HfO2/VO2 heterostructures on silicon
Key advantages of memory chips fabricated using the Harvard process include faster access time, smaller die size and lower power, all "holy grails" of the memory market. This invention is part of a portfolio of IP, starting with a basic patent for a vanadium oxide, field-induced switch.
Applications
Method for fabricating from a single type of material, devices that can undergo phase transitions (e.g., transition from an insulator to a metal, or vice versa) at multiple voltages. A typical material would be a functional (“smart”) oxide such as vanadium oxide. Storage devices could be built for example that can store multiple bits by implementing the different voltages. Resistive random access memory, a type of non-volatile RAM, is a major area of interest in the semiconductor industry.
Key advantages of memory chips fabricated using the Harvard process include faster access time, smaller die size and lower power, all "holy grails" of the memory market. This invention is part of a portfolio of IP, starting with a basic patent for a vanadium oxide, field-induced switch.
Method for fabricating from a single type of material, devices that can undergo phase transitions (e.g., transition from an insulator to a metal, or vice versa) at multiple voltages. A typical material would be a functional (“smart”) oxide such as vanadium oxide. Storage devices could be built for example that can store multiple bits by implementing the different voltages. Resistive random access memory, a type of non-volatile RAM, is a major area of interest in the semiconductor industry.
U.S. Patent(s) Issued: US9343206B2
Case Number: 4328