Unlocking High n+ Carrier Concentrations in Germanium for Advanced Devices
Germanium (Ge) holds great promise for the next generation of silicon CMOS-compatible devices due to its exceptional properties, including high electron and hole mobility and the ability to be grown directly on silicon substrates.
However, a persistent challenge in Ge device development has been achieving high n+ carrier concentrations through donor doping. Researchers at Harvard have developed a method to achieved a substantial n+ carrier concentration in strained epitaxial germanium-on-silicon. This work showcases that co-implantation and PLM can generate the necessary n+ carrier concentration and strain for high-performance Ge-on-Si devices, addressing the need for advanced methods in fabricating Ge films and related semiconductor structures.
This work was published in the Journal of Applied Physics.
Germanium (Ge) holds great promise for the next generation of silicon CMOS-compatible devices due to its exceptional properties, including high electron and hole mobility and the ability to be grown directly on silicon substrates.
However, a persistent challenge in Ge device development has been achieving high n+ carrier concentrations through donor doping. Researchers at Harvard have developed a method to achieved a substantial n+ carrier concentration in strained epitaxial germanium-on-silicon. This work showcases that co-implantation and PLM can generate the necessary n+ carrier concentration and strain for high-performance Ge-on-Si devices, addressing the need for advanced methods in fabricating Ge films and related semiconductor structures.
This work was published in the Journal of Applied Physics.
U.S. Patent(s) Issued: US 10,541,136