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Improved metal complex chemical precursors for atomic layer deposition (ALD) and chemical vapor depostion (CVD) using bicyclic guanidines

A new class of metal complex precursors has been identified for use in atomic layer deposition (ALD) and chemical vapor deposition (CVD), using bicycle guanidines as ligands as opposed to acetamidines. The ALD process involves the alternating delivery of two or more vapors to a surface on which reactions take place to deposit a solid product. While slower than CVD deposition, ALD allows for the uniform deposition of extremely thin layers in very tight geometries such as those found in modern DRAMs. When compared to traditional precursors such as halides, alkoxides, dialkylamides, and organometallics, this new class of metal complex precursors has greatly improved volatility, thermally stability, and high reactivity. A wide variety of metallic elements can be incorporated into this chemistry, covering nearly all of the technologically important transition metals and semiconductors.

Intellectual Property Status: Patent(s) Pending

Applications

Continued improvements in semiconductor technologies rely heavily on advanced material compositions such as high-k dielectrics, low-k dielectrics, and electrically conductive metal nitrides. These materials enable the continued progression of Moore's Law, allowing ever-smaller components to be integrated onto a microelectronic chip. In current device fabrication facilities, vapor deposition is a preferred method for making these materials, allowing precise control over material uniformity and stoichiometry. Successful precursors for vapor deposition must be volatile, thermally stable, and highly reactive. Identifying compounds that meet all of these challenging requirements is difficult.

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