Highly conformal tungsten nitride films for use in microelectronics and semiconductors

The invention describes a method of producing a uniform, smooth and conformal coating of tungsten nitride, synthesized by atomic layer deposition (ALD). The silver-colored coating (or film) is metallic and a good electrical conductor.


Suitable applications in microelectronics include barriers to the diffusion of copper and electrodes for thin film capacitors and field-effect transistors (FETs). Similar processes deposit molybdenum nitride, which is suitable for layers alternating with silicon in x-ray mirrors. Other markets addressed include
Atomic Layer Deposition and use in semiconductors.

U.S. Patent(s) Issued: 7,560,581